OSG60R030HT3Z is a MOS field effect transistor using TO-247 packaging technology. It has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and a wide safe working area.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product features:

The FET is a voltage control device that controls ID (drain current) through VGS (gate-source voltage);

The current at the control input terminal of the FET is extremely small, so its input resistance (107 ~ 1012Ω) is very large.

It uses majority carriers to conduct electricity, so its temperature stability is better;

The voltage amplification factor of the amplifier circuit formed by it is smaller than the voltage amplification factor of the amplifier circuit formed by the triode;

The FET has the strong anti-radiation ability;

The noise is low since it does not have shot noise caused by the diffusion of electrons in chaotic motion.