SRC60R230B 230mΩ, 600V is a high voltage power N-Channel power MOSFET manufactured with advanced super junction technology. It has low on-resistance, low gate charge, and fast switching times, making it ideal for applications requiring superior power density and efficiency.

Product parameters:

Model name: SRC60R230B

Transistor type: MOSFET

Control channel type: N channel

Maximum power consumption (Pd): 86.8 W

Maximum drain-source voltage |Vds|: 600 V

Maximum gate-source voltage |Vgs|: 30V

Maximum gate threshold voltage |Vgs(th)|: 5V

Maximum drain current |Id|: 13.7A

Maximum junction temperature (Tj): 150 °C

Total gate charge (Qg): 25.6 nC

Rise time (tr): 20 nS

Drain-source capacitance (Cd): 86.4 pF

Maximum drain-source on-resistance (Rds): 0.23 ohms