The SLF18N50C 18A 500V MOSFET is produced using Maple semi's advanced planar stripe DMOS technology, specially designed to minimize on-resistance, provide excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product parameters:

Model code: SLF18N50C

Transistor type: MOSFET

Control channel type: N channel

Maximum Power Consumption (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum gate-source voltage |Vgs|: 30 V

Maximum Gate Threshold Voltage |Vgs(th)|: 5 V

Maximum drain current |Id|: 18 A

Maximum junction temperature (Tj): 150°C

Total Gate Charge (Qg): 69 nC

Rise Time (tr): 43.5 ns

Drain-Source Capacitance (Cd): 335 pF

Maximum drain-source on-resistance (Rds): 0.283 ohms

Package: TO220F

Features:

- 18A, 500V, RDS(on)typ. = 236mΩ@VGS = 10 V

- Low gate charge ( typical 69nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved DV/DT capability